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LC821031 Arkusz danych(PDF) 5 Page - Sanyo Semicon Device |
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LC821031 Arkusz danych(HTML) 5 Page - Sanyo Semicon Device |
5 / 5 page PS No. 5735-5/5 LC821031 This catalog provides information as of February, 1998. Specifications and information herein are subject to change without notice. s No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. s Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. s Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. Sample Application Circuit • Use a 0.01 µF monolithic capacitor for C1. • Applications must set up the polarity of the image signal from the sensor so that white data is at the highest potential and black data is at the lowest. If the peak level in the image signal from the sensor does not reach 4.2 V, a level conversion circuit should be added to allow the application to take advantage of the dynamic range of the internal D/A converter. • Although AGND and DGND are fully isolated from each other within the IC, AVDD and DVDD are connected through the substrate. Therefore applications must be designed so that there is no potential difference between AVDD and DVDD. Also, the rise and fall of these power-supply potentials must occur within 3 ms of each other. A12 to A0 D7 to D0 PD7 to PD0 |
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