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2SA1015-X-T92-K Arkusz danych(PDF) 2 Page - Unisonic Technologies |
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2SA1015-X-T92-K Arkusz danych(HTML) 2 Page - Unisonic Technologies |
2 / 4 page 2SA1015 PNP SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2of 4 www.unisonic.com.tw QW-R201-004.C ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current IC -150 mA Base Current IB -50 mA Collector Dissipation PC 400 mW Junction Temperature TJ 125 °C Storage Temperature TSTG -55 ~ +125 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO IC=-100μA, IE=0 -50 V Collector-Emitter Breakdown Voltage BVCEO IC=-10mA, IB=0 -50 V Emitter-Base Breakdown Voltage BVEBO IE=-10μA, IC=0 -5 V Collector Cut-off Current ICBO VCB=-50V, IE=0 -100 nA Emitter Cut-off Current IEBO VEB=-5V, IC=0 -100 nA hFE1 VCE=-6V, IC=-2mA 120 700 DC Current Gain hFE2 VCE=-6V, IC=-150mA 25 Collector-Emitter Saturation Voltage VCE(SAT) IC=-100mA, IB=-10mA -0.1 -0.3 V Base-Emitter Saturation Voltage VBE(SAT) IC=-100mA, IB=-10mA -1.1 V Output Capacitance COB VCB=-10V, IE=0, f=1MHz 4.0 7.0 pF Current Gain Bandwidth Product fT VCE=-10V, Ic=-1mA 80 MHz Noise Figure NF VCE=-6V , IC=-0.1mA, RG=1kΩ, f=100Hz 0.5 6 dB CLASSIFICATION OF hFE1 RANK Y GR BL RANGE 120-240 200-400 350-700 |
Podobny numer części - 2SA1015-X-T92-K |
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Podobny opis - 2SA1015-X-T92-K |
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