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3N50 Arkusz danych(PDF) 2 Page - Unisonic Technologies |
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3N50 Arkusz danych(HTML) 2 Page - Unisonic Technologies |
2 / 6 page 3N50 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R502-530.a ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS ±30 V Continuous (TC=25°C) ID 3 * A Drain Current Pulsed (Note 1) IDM 12 * A Avalanche Current (Note 1) IAR 3 A Single Pulsed (Note 2) EAS 200 mJ Avalanche Energy Repetitive (Note 3) EAR 6.2 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns TO-220F 25 TC=25°C TO-252 50 W TO-220F 0.2 Power Dissipation Derate above 25°C TO-252 PD 0.4 W/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. * Drain current limited by maximum junction temperature THERMAL DATA PARAMETER SYMBOL RATINGS UNIT TO-220F 62.5 Junction to Ambient TO-252 θJA 110 °C/W TO-220F 4.9 Junction to Case TO-252 θJC 2.5 °C/W |
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