BC856A datasheet(4/14 Pages) INFINEON

Numer części	BC856A

Szczegółowy opis	PNP Silicon AF Transistor

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Producent	INFINEON [Infineon Technologies AG]

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4 / 14 page

2008-04-29

4

BC856...-BC860...

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0 , BC856...

IC = 10 mA, IB = 0 , BC857..., BC860...

IC = 10 mA, IB = 0 , BC858..., BC859...

V(BR)CEO

65

45

30

-

V

Collector-base breakdown voltage

IC = 10 µA, IE = 0 , BC856...

IC = 10 µA, IE = 0 , BC857..., BC860...

IC = 10 µA, IE = 0 , BC858..., BC859...

V(BR)CBO

80

50

30

-

Emitter-base breakdown voltage

IE = 1 µA, IC = 0

V(BR)EBO

5

-

Collector-base cutoff current

VCB = 45 V, IE = 0

VCB = 30 V, IE = 0 , TA = 150 °C

ICBO

-

0.015

5

µA

DC current gain1)

IC = 10 µA, VCE = 5 V, hFE-grp.A

IC = 10 µA, VCE = 5 V, hFE-grp.B

IC = 10 µA, VCE = 5 V, hFE-grp.C

IC = 2 mA, VCE = 5 V, hFE-grp.A

IC = 2 mA, VCE = 5 V, hFE-grp.B

IC = 2 mA, VCE = 5 V, hFE-grp.C

hFE

-

125

220

420

140

250

480

180

290

520

-

250

475

800

-

Collector-emitter saturation voltage1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VCEsat

-

75

250

300

650

mV

Base emitter saturation voltage1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VBEsat

-

700

850

-

Base-emitter voltage1)

IC = 2 mA, VCE = 5 V

IC = 10 mA, VCE = 5 V

VBE(ON)

600

-

650

-

750

820

1Pulse test: t < 300µs; D < 2%

Podobny numer części - BC856A

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NXP Semiconductors	BC856A	47Kb / 8P	PNP general purpose transistors 1999 Apr 12
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Podobny opis - BC856A

Producent	Numer części	Arkusz danych	Szczegółowy opis
Infineon Technologies A...	BC857BE6327	866Kb / 11P	PNP Silicon AF Transistor 2011-09-19
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Infineon Technologies A...	BC857T	55Kb / 6P	PNP Silicon AF Transistor Nov-29-2001
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	BC857BF	165Kb / 8P	PNP Silicon AF Transistor Jun-16-2004

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