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STK4162II Arkusz danych(PDF) 8 Page - Sanyo Semicon Device |
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STK4162II Arkusz danych(HTML) 8 Page - Sanyo Semicon Device |
8 / 8 page STK4162II No. 2886—8/8 s No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. s Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees, jointly or severally. s Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 1997. Specifications and information herein are subject to change without notice. In an actual application where a music signal is used, it is impractical to estimate the power dissipation based on the con- tinuous signal as shown above, because too large a heat sink must be used. It is reasonable to estimate the power dissipa- tion as 1/10 Po max. (EIAJ). That is, Pd = 28.5W at 8 Ω, Pd = 43.5W at 4Ω Thermal resistance θc-a of a heat sink for this IC power dissipation (Pd) is fixed under conditions 1 and 2 shown below. Condition 1: Tc = Pd × θc-a + Ta ≤ 125°C............................................... (1) where Ta : Specified ambient temperature Tc : Operating substrate temperature Condition 2: Tj= Pd × (θc-a) + Pd/4 × (θj-c) + Ta ≤ 150°C..................... (2) where Tj : Junction temperature of power transistor Assuming that the power dissipation is shared equally among the four power transistors (2 channels × 2), thermal resis- tance θj-c is 2.1°C/W and Pd × (θc-a + 2.1/4) + Ta ≤ 150°C........................................ (3) Thermal resistance θc-a of a heat sink must satisfy ine- qualities (1) and (3). Figure 3 shows the relation between Pd and θc-a given from (1) and (3) with Ta as a parameter. [Example] The thermal resistance of a heat sink is obtained when the ambient temperature speci- fied for a stereo amplifier is 50 °C. Assuming VCC = ±30V, RL = 8Ω, VCC = ±27V, RL = 4Ω, RL = 8Ω : Pd1 = 28.5W at 1/10 Po max. RL = 4Ω : Pd2 = 43.5W at 1/10 Po max. The thermal resistance of a heat sink is obtained from Figure 3. RL = 8Ω : θc-a1 = 2.63°C/W RL = 4Ω : θc-a2 = 1.72°C/W Tj when a heat sink is used is obtained from (3). RL = 8Ω : Tj = 139.9°C RL = 4Ω : Tj = 147.7°C Figure 3. STK4162II θc-a – Pd IC Power dissipation, Pd - W |
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