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LS3550B_TO-78 Arkusz danych(PDF) 1 Page - Micross Components |
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LS3550B_TO-78 Arkusz danych(HTML) 1 Page - Micross Components |
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1 / 1 page  Click To Buy Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. FEATURES EXCELLENT THERMAL TRACKING ≤5µV/°C TIGHT VBE MATCHING |VBE1 – VBE2 |≤5mV ABSOLUTE MAXIMUM RATINGS 1 @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature ‐65°C to +150°C Operating Junction Temperature ‐55°C to +150°C Maximum Power Dissipation Continuous Power Dissipation TBD Maximum Currents Collector Current 10mA Maximum Voltages Collector to Collector Voltage 80V MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) SYMBOL CHARACTERISTIC MIN TYP MAX UNITS CONDITIONS |VBE1 – VBE2 | Base Emitter Voltage Differential ‐‐ ‐‐ 5 mV IC = ‐10mA, VCE = ‐5V ∆|(VBE1 – VBE2)| / ∆T Base Emitter Voltage Differential Change with Temperature ‐‐ ‐‐ 5 µV/°C IC = ‐10mA, VCE = ‐5V TA = ‐40°C to +85°C |IB1 – IB2 | Base Current Differential ‐‐ ‐‐ 10 nA IC = ‐10µA, VCE = ‐5V |∆ (IB1 – IB2)|/∆T Base Current Differential Change with Temperature ‐‐ ‐‐ 0.5 nA/°C IC = ‐10µA, VCE = ‐5V TA = ‐40°C to +85°C hFE1 /hFE2 DC Current Gain Differential ‐‐ ‐‐ 10 % IC = 10µA, VCE = 5V ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN. TYP. MAX. UNITS CONDITIONS BVCBO Collector to Base Voltage ‐40 ‐‐ ‐‐ V IC = 10µA, IE = 0 BVCEO Collector to Emitter Voltage ‐40 ‐‐ ‐‐ V IC = 10µA, IB = 0 BVEBO Emitter‐Base Breakdown Voltage ‐6.2 ‐‐ ‐‐ V IE = 10µA, IC = 0 2 BVCCO Collector to Collector Voltage ‐80 ‐‐ ‐‐ V IC = 10µA, IE = 0 hFE DC Current Gain 100 ‐‐ ‐‐ IC = ‐1mA, VCE = ‐5V 80 ‐‐ ‐‐ IC = ‐10mA, VCE = ‐5V 80 ‐‐ ‐‐ IC = ‐100mA, VCE = ‐5V VCE(SAT) Collector Saturation Voltage ‐‐ ‐‐ ‐0.25 V IC = ‐100mA, IB = ‐10mA IEBO Emitter Cutoff Current ‐‐ ‐‐ ‐0.2 nA IE = 0, VCB = ‐3V ICBO Collector Cutoff Current ‐‐ ‐‐ ‐0.2 nA IE = 0, VCB = ‐30V COBO Output Capacitance ‐‐ ‐‐ 2 pF IE = 0, VCB = ‐10V CC1C2 Collector to Collector Capacitance ‐‐ ‐‐ 2 pF VCC = 0V IC1C2 Collector to Collector Leakage Current ‐‐ ‐‐ ‐1 nA VCC = ±80V fT Current Gain Bandwidth Product(Current) ‐‐ ‐‐ 600 MHz IC = ‐1mA, VCE = ‐5V NF Narrow Band Noise Figure ‐‐ ‐‐ 3 dB IC = ‐100µA, VCE = ‐5V, BW=200Hz, RG= 10Ω, f = 1KHz Notes: 1. Absolute Maximum ratings are limiting values above which serviceability may be impaired 2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA. LS3550B MONOLITHIC DUAL PNP TRANSISTOR LS3550B Features: Tight matching Low Output Capacitance The LS3550B is a monolithic pair of PNP transistors mounted in a single TO-78 package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching. The hermetically sealed TO-78 is well suited for hi-rel and harsh environment applications. (See Packaging Information). Linear Systems Monolithic Dual PNP Transistor Available Packages: LS3550B in TO-78 LS3550B available as bare die Please contact Micross for full package and die dimensions: Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx TO-78 (Bottom View) |
Podobny numer części - LS3550B_TO-78 |
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