2N2369ADCSM datasheet(2/2 Pages) SEME-LAB

Numer części	2N2369ADCSM

Szczegółowy opis	DUAL HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE

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Parameter

Test Conditions

Min.

Typ.

Max.

Unit

2N2369ADCSM

Prelim. 3/00

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk

Website: http://www.semelab.co.uk

IC = 10mA

IE = 10mA

VCE = 20V

VCE = 10V

TA = +150°C

VCB = 20V

TA = +125°C

VEB = 4V

IC = 10mA

IB = 1mA

TA = +150°C

IC = 30mA

IB = 3mA

IC = 100mA

IB = 10mA

TA = +25°C

IC = 10mA

TA = +150°C

IB = 1mA

TA = –55°C

IC = 30mA

IB = 3mA

IC = 100mA

IB = 10mA

IC = 10mA

VCE = 0.35V

IC = 30mA

VCE = 0.40V

IC = 10mA

VCE = 1V

TA = –55°C

IC = 100mA

VCE = 1V

IC = 10mA

VCE = 10V

f = 100MHz

VCB = 5V

IE = 0

f = 100kHz to 1MHz

VEB = 0.5V

IC = 0

f = 100kHz to 1MHz

IC = 10mA

IB1 = –IB2 = 10mA

IC = 10mA

IB1 = 3mA

IB2 = –1.5mA

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)

V(BR)CEO* Collector – Emitter Breakdown Voltage

V(BR)CBO

Collector – Base Breakdown Voltage

V(BR)EBO

Emitter – Base Breakdown Voltage

ICES

Collector – Emitter Cut-off Current

ICBO

Collector – Base Cut-off Current

IEBO

Emitter – Base Cut-off Current

VCE(sat)

Collector – Emitter Saturation Voltage

VBE(sat)

Base – Emitter Saturation Voltage

hFE*

Current Gain

|hfe|

Magnitude of hfe

Cob

Output Capacitance

Cib

Input Capacitance

ts

Storage Time

ton

Turn–On Time

toff

Turn–Off Time

15

40

4.5

0.40

0.30

30

0.20

30

0.25

0.20

0.30

0.25

0.43

0.70

0.85

0.59

1.02

0.90

1.20

40

120

30

120

40

120

20

120

510

4

5

13

12

18

V

mA

V

—

pF

ns

* Pulse Test: tp £ 300ms, d£ 2%.

Podobny numer części - 2N2369ADCSM

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Seme LAB	2N2369ADCSM	21Kb / 2P	DUAL HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE
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Producent	Numer części	Arkusz danych	Szczegółowy opis
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