2N3811 datasheet(1/5 Pages) MICROSEMI

Numer części	2N3811

Szczegółowy opis	PNP SILICON DUAL TRANSISTOR

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Producent	MICROSEMI [Microsemi Corporation]

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TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

Gort Road Business Park, Ennis, Co. Clare, Ireland

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

Website: http://www.microsemi.com

PNP SILICON DUAL TRANSISTOR

Qualified per MIL-PRF-19500 /336

T4-LDS-0118 Rev. 2 (110152)

Page 1 of 5

DEVICES

LEVELS

2N3810

2N3811

JAN

2N3810L

2N3811L

JANTX

2N3810U

2N3811U

JANTV

JANS

ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)

Parameters / Test Conditions

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

60

Vdc

Collector-Base Voltage

VCBO

60

Vdc

Emitter-Base Voltage

VEBO

5.0

Vdc

Collector Current

IC

50

mAdc

One

Section 1

Both

Sections 2

Total Power Dissipation @ TA = +25°C

PT

200

350

mW

Operating & Storage Junction Temperature Range

TJ, Tstg

-65 to +200

°C

NOTES:

1. Derate linearly 1.143mW/°C for TA > +25°C (one section)

2. Derate linearly 2.000mW/°C for TA > +25°C (both sections)

ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

OFF CHARACTERTICS

Collector-Emitter Breakdown Voltage

V(BR)CEO

Vdc

IC = 100μAdc

60

Collector-Base Cutoff Current

ICBO

ηAdc

μAdc

VCB = 50Vdc

VCB = 60Vdc

10

Emitter-Base Cutoff Current

IEBO

VEB = 4.0Vdc

VEB = 5.0Vdc

10

ηAdc

μAdc

TO-78

U - Package

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