FMC03N60E datasheet(2/5 Pages) FUJI

Numer części	FMC03N60E

Szczegółowy opis	N-CHANNEL SILICON POWER MOSFETFeatures

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Producent	FUJI [Fuji Electric]

Strona internetowa	http://www.fujielectric.co.jp/eng/fdt/scd

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2

FMC03N60E

2

FUJI POWER MOSFET

0

2

4

6

8

10

1.5

2.0

2.5

3.0

3.5

4.0

4.5V

ID [A]

Typical Drain-Source on-state Resistance

RDS(on)=f(ID):80 µs pulse test,Tch=25 °C

10V

6V

5V

VGS=4.0V

0.01

0.1

1

10

100

0.01

0.1

1

10

100

ID [A]

Typical Transconductance

gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C

0

1

2

3

4

5

6

7

8

9

10

-4

10

-3

10

-2

10

-1

10

0

10

1

VGS[V]

Typical Transfer Characteristic

ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C

0

4

8

12

16

20

24

0

2

4

6

8

10

VDS [V]

Typical Output Characteristics

ID=f(VDS):80 µs pulse test,Tch=25 °C

10V

5.0V

6.0V

4.5V

VGS=4.0V

10

-1

10

0

10

1

10

2

10

3

10

-3

10

-2

10

-1

10

0

10

1

10

2

DC

t

PD

Power loss waveform :

Square waveform

t

PD

t

PD

Power loss waveform :

Square waveform

VDS [V]

Safe Operating Area

ID=f(VDS):Duty=0(Single pulse),Tc=25 °c

t=

1µs

10µs

1ms

100µs

0

25

50

75

100

125

150

0

20

40

60

80

100

120

140

160

180

200

Allowable Power Dissipation

PD=f(Tc)

Tc [°C]

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FMC03N60E Arkusz danych(PDF) 2 Page - Fuji Electric

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