Zakładka z wyszukiwarką danych komponentów |
|
FMH11N90E Arkusz danych(PDF) 1 Page - Fuji Electric |
|
FMH11N90E Arkusz danych(HTML) 1 Page - Fuji Electric |
1 / 5 page 1 FMH11N90E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.0±0.5V) High avalanche durability Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description Symbol Characteristics Unit Remarks Drain-Source Voltage VDS 900 V VDSX 900 V VGS = -30V Continuous Drain Current ID ±11 A Pulsed Drain Current IDP ±44 A Gate-Source Voltage VGS ±30 V Repetitive and Non-Repetitive Maximum AvalancheCurrent IAR 11 A Note*1 Non-Repetitive Maximum Avalanche Energy EAS 811.9 mJ Note*2 Repetitive Maximum Avalanche Energy EAR 28.5 mJ Note*3 Peak Diode Recovery dV/dt dV/dt 2.2 kV/µs Note*4 Peak Diode Recovery -di/dt -di/dt 100 A/µs Note*5 Maximum Power Dissipation PD 2.5 W Ta=25°C 285 Tc=25°C Operating and Storage Temperature range Tch 150 °C Tstg -55 to + 150 °C Outline Drawings [mm] Equivalent circuit schematic Electrical Characteristics at Tc=25°C (unless otherwise specified) Description Symbol Conditions min. typ. max. Unit Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 900 - - V Gate Threshold Voltage VGS (th) ID=250µA, VDS=VGS 3.5 4.0 4.5 V Zero Gate Voltage Drain Current IDSS VDS=900V, VGS=0V Tch=25°C - - 25 µA VDS=720V, VGS=0V Tch=125°C - - 250 Gate-Source Leakage Current IGSS VGS=±30V, VDS=0V - 10 100 nA Drain-Source On-State Resistance RDS (on) ID=5.5A, VGS=10V - 0.83 1.0 Ω Forward Transconductance gfs ID=5.5A, VDS=25V 6.5 13 - S Input Capacitance Ciss VDS=25V VGS=0V f=1MHz - 2300 3450 pF Output Capacitance Coss - 200 300 Reverse Transfer Capacitance Crss - 15 22.5 Turn-On Time td(on) Vcc=600V VGS=10V ID=5.5A RG=20Ω - 37 56 ns tr - 32 48 Turn-Off Time td(off) - 124 186 tf - 34 51 Total Gate Charge QG Vcc=450V ID=11A VGS=10V - 60 90 nC Gate-Source Charge QGS - 17 26 Gate-Drain Charge QGD - 23 35 Gate-Drain Crossover Charge QSW - 7 11 Avalanche Capability IAV L=4.92mH, Tch=25°C 11 - - A Diode Forward On-Voltage VSD IF=11A, VGS=0V, Tch=25°C - 0.90 1.35 V Reverse Recovery Time trr IF=11A, VGS=0V -di/dt=100A/µs, Tch=25°C - 2.0 - µS Reverse Recovery Charge Qrr - 20 - µC Note *1 : Tch≤150°C Note *2 : Stating Tch=25°C, IAS=4.4A, L=76.9mH, Vcc=90V, RG=10Ω EAS limited by maximum channel temperature and avalanche current. See to 'Avalanche current' graph. Thermal Characteristics Description Symbol Test Conditions min. typ. max. Unit Thermal resistance Rth (ch-c) Channel to case 0.4386 °C/W Rth (ch-a) Channel to ambient 50.0 °C/W Gate(G) Source(S) Drain(D) Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. See to the 'Transient Themal impeadance' graph. Note *4 : IF≤-ID, -di/dt=100A/µs, Vcc≤BVDSS, Tch≤150°C. Note *5 : IF≤-ID, dv/dt=2.2kV/µs, Vcc≤BVDSS, Tch≤150°C. TO-3P(Q) |
Podobny numer części - FMH11N90E |
|
Podobny opis - FMH11N90E |
|
|
Link URL |
Polityka prywatności |
ALLDATASHEET.PL |
Czy Alldatasheet okazała się pomocna? [ DONATE ] |
O Alldatasheet | Reklama | Kontakt | Polityka prywatności | Linki | Lista producentów All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |