KMC7D0CN20CA datasheet(2/5 Pages) KEC

Numer części	KMC7D0CN20CA

Szczegółowy opis	Common N-Ch Trench MOSFET

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Producent	KEC [KEC(Korea Electronics)]

Strona internetowa	http://www.keccorp.com

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2 / 5 page

2008. 12. 19

2/5

KMC7D0CN20CA

Revision No : 3

ELECTRICAL CHARACTERISTICS (Ta=25

)

Note > *Pulse test : Pulse width

300

, Duty Cycle

2%.

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Static

Drain to Source Breakdown Voltage

BVDSS

VGS=0V, ID=250 A

20

-

V

Drain Cut-off Current

IDSS

VDS=16V, VGS=0V

-

1

A

Gate to Source Leakage Current

IGSS

VGS= 10V, VDS=0V

-

10

A

Gate Threshold Voltage

Vth

VDS=VGS, ID=250 A

0.5

0.7

1.5

V

Drain to Source On Resistance

RDS(ON)*

VGS=4.5V, ID=4.0A

-

16.5

20.5

m

VGS=4.0V, ID=3.0A

-

17.0

21.0

VGS=3.1V, ID=3.0A

-

18.5

22.5

VGS=2.5V, ID=3.0A

-

20.5

26.0

Gate Resistance

Rg

f=1MHz

-

2.5

-

k

Forward Transconductance

gfs*

VDS=5V, ID=5A

-

12

-

S

Dynamic

Total Gate Charge

Qg*

VDS=10V, ID=7A

VGS=4.0V

-

6.7

-

nC

Gate to Source Charge

Qgs*

-

0.8

-

Gate to Drain Charge

Qgd*

-

3.2

-

Turn-On Delay Time

td(on)

VDD=10V, VGS=4.0V

ID=4.0A, RG=6

-

1.0

-

s

Turn-On Rise Time

tr

-

2.1

-

Turn-Off Delay Time

td(off)

-

8.5

-

Turn-Off Fall Time

tf

-

7.5

-

Source to Drain Diode Ratings

Source to Drain Diode Forward Voltage

VSD*

VGS=0V, IS=1.7A

-

0.8

1.2

V

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