STD1766 datasheet(1/5 Pages) KODENSHI

Numer części	STD1766

Szczegółowy opis	NPN Silicon Transistor

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Producent	KODENSHI [KODENSHI_AUK CORP.]

Strona internetowa	http://www.kodenshi.co.kr

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KSD-T5B004-003

1

STD1766

NPN Silicon Transistor

SOT-89

PIN Connection

ㅇ

Descriptions

• Medium power amplifier

Features

• PC(Collector power dissipation)=2W

(Ceramic substrate of 250 ㎟×0.8t used)

• Low collector saturation voltage :

VCE(sat)=0.5V(Typ.)

• Complementary pair with STB1188

• “Green” device and RoHS compliant device

• Available in full lead (Pb)-free device

Ordering Information

Type NO.

Marking

Package Code

STD1766

B2

□

YWW

SOT-89

B2: DEVICE CODE, □

: hFE rank, YWW(Y : Year code, WW : Weekly code)

Absolute maximum ratings

(Ta=25

°C)

Characteristic

Symbol

Ratings

Unit

Collector-Base voltage

VCBO

40

V

Collector-Emitter voltage

VCEO

32

V

Emitter-Base voltage

VEBO

5

V

IC

2

A(DC)

Collector current

ICP*

4

A(Pulse)

PC

0.5

Collector power dissipation

PC**

1

W

Junction temperature

TJ

150

°C

Storage temperature

Tstg

-55~150

°C

Characteristic

Symbol

Typ.

Max

Unit

Rth(J-A)

-

250.0

Thermal resistance

Junction-ambient

Rth(J-A) **

-

125.0

℃

/W

* :

Single pulse, tp= 300 ㎲

** : When mounted on ceramic substrate(250 ㎟×0.8t)

Podobny numer części - STD1766

Producent	Numer części	Arkusz danych	Szczegółowy opis
AUK corp	STD1766	88Kb / 3P	NPN Silicon Transistor
KODENSHI_AUK CORP.	STD1766	320Kb / 5P	NPN Silicon Transistor

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