BF422_10 datasheet(2/4 Pages) ONSEMI

Numer części	BF422

Szczegółowy opis	High Voltage Transistors

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BF422

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 1)

(IC = 1.0 mAdc, IB = 0)

V(BR)CEO

300

−

Vdc

Collector−Base Breakdown Voltage

(IC = 100 mAdc, IE = 0)

V(BR)CBO

300

−

Vdc

Emitter−Base Breakdown Voltage

(IE = 100 mAdc, IC = 0)

V(BR)EBO

5.0

−

Vdc

Collector Cutoff Current

(VCB = 200 Vdc, IE = 0)

ICBO

−

0.01

mAdc

Emitter Cutoff Current

(VEB = 5.0 Vdc, IC = 0)

IEBO

−

100

nAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 25 mAdc, VCE = 20 Vdc)

hFE

50

−

Collector−Emitter Saturation Voltage

(IC = 20 mAdc, IB = 2.0 mAdc)

VCE(sat)

−

0.5

Vdc

Base −Emitter Saturation Voltage

(IC = 20 mAdc, IB = 2.0 mAdc)

VBE(sat)

−

2.0

Vdc

SMALL−SIGNAL CHARACTERISTICS

CurrentGain − Bandwidth Product

(IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz)

fT

60

−

MHz

Common Emitter Feedback Capacitance

(VCB = 30 Vdc, IE = 0, f = 1.0 MHz)

Cre

−

1.6

pF

1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.

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