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TIP35AG Arkusz danych(PDF) 1 Page - ON Semiconductor

Numer części TIP35AG
Szczegółowy opis  Complementary Silicon High?뭁ower Transistors
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Producent  ONSEMI [ON Semiconductor]
Strona internetowa  http://www.onsemi.com
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TIP35AG Arkusz danych(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2005
September, 2005 − Rev. 5
1
Publication Order Number:
TIP35A/D
TIP35A, TIP35B, TIP35C
(NPN); TIP36A, TIP36B,
TIP36C (PNP)
TIP35B, TIP35C, TIP36B, and TIP36C are Preferred Devices
Complementary Silicon
High−Power Transistors
Designed for general−purpose power amplifier and switching
applications.
Features
25 A Collector Current
Low Leakage Current −
ICEO = 1.0 mA @ 30 and 60 V
Excellent DC Gain −
hFE = 40 Typ @ 15 A
High Current Gain Bandwidth Product −
⎪hfe⎪ = 3.0 min @ IC
= 1.0 A, f = 1.0 MHz
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
TIP35A
TIP36A
TIP35B
TIP36B
TIP35C
TIP36C
Unit
Collector − Emitter Voltage
VCEO
60
80
100
Vdc
Collector − Base Voltage
VCB
60
80
100
Vdc
Emitter − Base Voltage
VEB
5.0
Vdc
Collector Current
− Continuous
− Peak (Note 1)
IC
25
40
Adc
Base Current − Continuous
IB
5.0
Adc
Total Power Dissipation
@ TC = 25_C
Derate above 25
_C
PD
125
W
W/
_C
Operating and Storage
Junction Temperature Range
TJ, Tstg
−65 to +150
_C
Unclamped Inductive Load
ESB
90
mJ
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Case
RqJC
1.0
°C/W
Junction−To−Free−Air
Thermal Resistance
RqJA
35.7
°C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 10 ms, Duty Cycle
v 10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use
and best overall value.
25 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60−100 VOLTS, 125 WATTS
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
SOT−93 (TO−218)
CASE 340D
STYLE 1
MARKING DIAGRAM
A
= Assembly Location
Y
= Year
WW
= Work Week
TIP3xx
= Device Code
xx
= 5A, 5B, 5C
6A, 6B, 6C
G
= Pb−Free Package
AYWWG
TIP3xx


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