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TIP35BG Arkusz danych(PDF) 4 Page - ON Semiconductor

Numer części TIP35BG
Szczegółowy opis  Complementary Silicon High?뭁ower Transistors
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Producent  ONSEMI [ON Semiconductor]
Strona internetowa  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

TIP35BG Arkusz danych(HTML) 4 Page - ON Semiconductor

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TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP)
http://onsemi.com
4
0.5
1.0
2.0
7.0
0.3
3.0
5.0
0.7
IC, COLLECTOR CURRENT (AMPERES)
Figure 4. Turn−Off Time
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
10
20
30
TJ = 25°C
VCC = 30 V
IC/IB = 10
IB1 = IB2
ts
tf
(PNP)
(NPN)
ts
tf
IC, COLLECTOR CURRENT (AMPS)
Figure 5. DC Current Gain
200
500
0.2
0.5
2.0
100
0.1
100
50
20
10
1.0
VCE = 4.0 V
TJ = 25°C
5.0
10
20
5.0
50
PNP
NPN
1000
2.0
1.0
FORWARD BIAS
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on TC = 25_C; TJ(pk) is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC w 25_C. Second breakdown limitations do
not derate the same as thermal limitations.
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn−off, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage−current conditions during
reverse biased turn−off. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 7 gives RBSOA characteristics.
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
7.0
20
1.0
50
100
0.2
0
0.5
SECONDARY BREAKDOWN
THERMAL LIMIT
BONDING WIRE LIMIT
1.0ms
dc
300 ms
2.0
1.0
100
30
10ms
Figure 6. Maximum Rated Forward Bias
Safe Operating Area
50
20
10
5.0
0.3
2.0 3.0
5.0
10
30
70
TC = 25°C
TIP35A, 36A
TIP35B, 36B
TIP35C, 36C
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
40
60
0
80
100
5.0
0
15
20
40
30
Figure 7. Maximum Rated Forward Bias
Safe Operating Area
25
10
10
20
30
50
70
90
TJ ≤ 100°C
TIP35A
TIP36A
TIP35B
TIP36B
TIP35C
TIP36C


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