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2009 ROHM Co., Ltd. All rights reserved.

2010.09 - Rev.A

General purpose transistor(50V,0.1A)

2SCR523M / 2SCR523EB / 2SCR523UB



Structure



Dimensions (Unit : mm)

NPN silicon epitaxial planar transistor



Features

1) Complements the 2SAR523M / 2SAR523EB / 2SAR523UB.



Applications

Switch, LED driver



Packaging specifications

Packaging Type

Code

Taping

Basic ordering

unit (pieces)

T2L

8000

Taping

TL

3000

Taping

TL

3000

2SCR523M

2SCR523EB

2SCR523UB

Package

VMT3

EMT3F

UMT3F

Type



Absolute maximum ratings (Ta=25

C)



Inner circuit

Symbol

Limits

Unit

50

V

50

V

V

5

mA

200

mA

100

150

°C

−55 to +150

°C

200

150

mW

mW

∗1

∗2

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Junction temperature

Range of storage temperature

Power dissipation

Parameter

2SCR523M,2SCR523EB

2SCR523UB



Electrical characteristics (Ta=25

C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Cob

50

50

5

−

−

−

−

−

−

−

−

−

−

350

0.10

1.6

−

−

−

0.1

0.1

0.30

−

−

V

V

V

μA

μA

V

MHz

pF

=50μA

=1mA

=50μA

=50V

=5V

120

−

560

−

Output capacitance

Transition frequency

Collector-emitter saturation voltage

Emitter cut-off current

Collector cut-off current

Emitter-base breakdown voltage

Collector-emitter breakdown voltage

Collector-base breakdown voltage

DC current gain

VMT3

EMT3F

(1)

(2)

(3)

UMT3F

2.0

0.32

0.65

0.65

1.3

(1)

(2)

(3)

0.9

0.13

Abbreviated symbol : NB

Abbreviated symbol : NB

Abbreviated symbol : NB

(1)

(3)

(2)

(1) Base

(2) Emitter

(3) Collector