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BD3506EFV Arkusz danych(PDF) 1 Page - Rohm |
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BD3506EFV Arkusz danych(HTML) 1 Page - Rohm |
1 / 15 page 1/14 www.rohm.com 2010.05 - Rev.A © 2010 ROHM Co., Ltd. All rights reserved. High Performance Regulators for PCs Nch FET Ultra LDO for PC Chipsets BD3506F,BD3506EFV Description The BD3506F/EFV is an ultra-low dropout linear regulator for chipset that can achieve ultra-low voltage input to ultra-low voltage output. By using N-MOS FET for built-in power transistor, the regulator can be used at ultra-low I/O voltage difference up to voltage difference generated by ON resistor (Ron = 120 mΩ/100 mΩ). Because by reducing the I/O voltage difference, large current (Iomax = 2.5A) output is achieved and conversion loss can be reduced, switching power supply can be replaced. BD3506F/EFV does not need any choke coil, diode for rectification and power transistors which are required for switching power supply, total cost of the set can be reduced and compact size can be achieved for the set. Using external resistors, optional output from 0.65V to 2.5V can be set. In addition, since voltage output start-up time can be adjusted by using the NRCS terminal, it is possible to meet the power supply sequence of the set. Features 1) Built-in high-accuracy reference voltage circuit (0.65V±1%) 2) Built-in VCC low input maloperation prevention circuit (Vcc = 4.15V) 3) Reduced rush current by NRCS 4) Built-in ultra-low on-resistor (120/100 mΩ typ) Nch Power MOSFET (BD3506F/BD3506EFV) 5) Built-in current limiting circuit (2.5A min) 6) Built-in thermal shutdown circuit 7) Output variable type (0.65-2.5V) 8) Adoption of SOP8 package (BD3506F): 5.0 x 6.2 x 1.5 (mm) 9) Adoption of high power HTSSOP-B20 package (BD3506EFV): 5.0 x 6.4 x 1.0 (mm) Applications Mobile PC, desktop PC, LCD-TV, DVD, digital home appliances ● Line up Parameter BD3506F BD3506EFV Ron 120mΩ 100mΩ Output Current 2.5A 2.5A Package SOP8 HTSSOP-B20 ● Absolute Maximum Ratings(Ta=25℃) Parameter Symbol Ratings Unit BD3506F BD3506EFV Input Voltage1 VCC 7 * 1 7 * 1 V Input Voltage2 VIN 7 * 1 7 * 1 V Enable Input Voltage Ven 7 7 V Power Dissipation1 Pd1 560 * 2 - mW Power Dissipation2 Pd2 690 * 3 1000 * 4 mW Operating Temperature Range Topr -10~+100 -10~+100 ℃ Storage Temperature Range Tstg -55~+125 -55~+125 ℃ Maximum Junction Temperature Tjmax +150 +150 ℃ *1 However, not exceeding Pd. *2 In the case of Ta≥25°C (no heat radiation board), derated at 4.48 mW/°C. *3 In the case of Ta≥25°C (when mounting to 70mmx70mmx1.6mm glass epoxy substrate), derated at 5.52 mW/°C. *4 In the case of Ta≥25°C (when mounting to 70mmx70mmx1.6mm glass epoxy substrate), derated at 8.00 mW/°C. No.10030EAT30 |
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