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BD3506EFV Arkusz danych(PDF) 1 Page - Rohm

Numer części BD3506EFV
Szczegółowy opis  Nch FET Ultra LDO for PC Chipsets
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Producent  ROHM [Rohm]
Strona internetowa  http://www.rohm.com
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BD3506EFV Arkusz danych(HTML) 1 Page - Rohm

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www.rohm.com
2010.05 - Rev.A
© 2010 ROHM Co., Ltd. All rights reserved.
High Performance Regulators for PCs
Nch FET Ultra LDO
for PC Chipsets
BD3506F,BD3506EFV
Description
The BD3506F/EFV is an ultra-low dropout linear regulator for chipset that can achieve ultra-low voltage input to ultra-low
voltage output. By using N-MOS FET for built-in power transistor, the regulator can be used at ultra-low I/O voltage
difference up to voltage difference generated by ON resistor (Ron = 120 mΩ/100 mΩ). Because by reducing the I/O voltage
difference, large current (Iomax = 2.5A) output is achieved and conversion loss can be reduced, switching power supply can
be replaced. BD3506F/EFV does not need any choke coil, diode for rectification and power transistors which are required
for switching power supply, total cost of the set can be reduced and compact size can be achieved for the set. Using
external resistors, optional output from 0.65V to 2.5V can be set. In addition, since voltage output start-up time can be
adjusted by using the NRCS terminal, it is possible to meet the power supply sequence of the set.
Features
1) Built-in high-accuracy reference voltage circuit (0.65V±1%)
2) Built-in VCC low input maloperation prevention circuit (Vcc = 4.15V)
3) Reduced rush current by NRCS
4) Built-in ultra-low on-resistor (120/100 mΩ typ) Nch Power MOSFET (BD3506F/BD3506EFV)
5) Built-in current limiting circuit (2.5A min)
6) Built-in thermal shutdown circuit
7) Output variable type (0.65-2.5V)
8) Adoption of SOP8 package (BD3506F): 5.0 x 6.2 x 1.5 (mm)
9) Adoption of high power HTSSOP-B20 package (BD3506EFV): 5.0 x 6.4 x 1.0 (mm)
Applications
Mobile PC, desktop PC, LCD-TV, DVD, digital home appliances
Line up
Parameter
BD3506F
BD3506EFV
Ron
120mΩ
100mΩ
Output Current
2.5A
2.5A
Package
SOP8
HTSSOP-B20
Absolute Maximum Ratings(Ta=25℃)
Parameter
Symbol
Ratings
Unit
BD3506F
BD3506EFV
Input Voltage1
VCC
7 *
1
7 *
1
V
Input Voltage2
VIN
7 *
1
7 *
1
V
Enable Input Voltage
Ven
7
7
V
Power Dissipation1
Pd1
560 *
2
-
mW
Power Dissipation2
Pd2
690 *
3
1000 *
4
mW
Operating Temperature Range
Topr
-10~+100
-10~+100
Storage Temperature Range
Tstg
-55~+125
-55~+125
Maximum Junction Temperature
Tjmax
+150
+150
*1 However, not exceeding Pd.
*2 In the case of Ta≥25°C (no heat radiation board), derated at 4.48 mW/°C.
*3 In the case of Ta≥25°C (when mounting to 70mmx70mmx1.6mm glass epoxy substrate), derated at 5.52 mW/°C.
*4 In the case of Ta≥25°C (when mounting to 70mmx70mmx1.6mm glass epoxy substrate), derated at 8.00 mW/°C.
No.10030EAT30


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