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IXZ210N50L Arkusz danych(PDF) 1 Page - IXYS Corporation

Numer części IXZ210N50L
Szczegółowy opis  RF Power MOSFET
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Producent  IXYS [IXYS Corporation]
Strona internetowa  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXZ210N50L Arkusz danych(HTML) 1 Page - IXYS Corporation

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IXZ210N50L & IXZ2210N50L
RF Power MOSFET
VDSS
=
500 V
ID25
=
10 A
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
500
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
500
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
Tc = 25°C
10
A
IDM
Tc = 25°C, pulse width limited by
TJM
60
A
IAR
Tc = 25°C
16
A
EAR
Tc = 25°C
TBD
mJ
dv/dt
IS ≤ IDM, di/dt ≤ 100A/µs, VDD
VDSS,
Tj ≤ 150°C, RG = 0.2Ω
5
V/ns
IS = 0
>200
V/ns
PDC
470
940
W
PDHS
Tc = 25°C, Derate 6.0W/°C above
25°C
235
470
W
PDAMB
Tc = 25°C
10
10
W
RthJC
0.32
0.16
C/W
RthJHS
0.57
0.29
C/W
IXZ210N50L IXZ2210N50L
min.
typ.
max.
VDSS
VGS = 0 V, ID = 4 ma
500
V
VGS(th)
VDS = VGS, ID = 250µΑ
3.5
4.95
6.5
V
IGSS
VGS = ±20 VDC, VDS = 0
±100
nA
IDSS
VDS = 0.8VDSS
TJ = 25C
VGS=0
TJ =125C
50
1
µA
mA
RDS(on)
VGS = 20 V, ID = 0.5ID25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
1.0
gfs
VDS = 50 V, ID = 0.5ID25, pulse test
3.8
S
TJ
-55
+175
°C
TJM
+175
°C
Tstg
-55
+ 175
°C
TL
1.6mm(0.063 in) from case for 10 s
300
°C
Weight
4
g
Features
Isolated Substrate
high isolation voltage (>2500V)
excellent thermal transfer
Increased temperature and power
cycling capability
IXYS RF Low Capacitance Z-MOS
TM
Process
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other
hazardous materials
Advantages
High Performance RF Package
Easy to mount—no insulators needed
(1) Thermal specifications are for the pack-
age, not per transistor
N-Channel Enhancement Mode Linear 175MHz RF MOSFET
Low Capacitance Z-MOSTM MOSFET Process
Optimized for Linear Operation
Ideal for Class AB & C, Broadcast & Communications Applications
150V (operating)
300 & 550 Watts
175MHz
Note: All data is per the IXZ210N50L single ended device unless otherwise noted.


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