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2SA1213-O Arkusz danych(PDF) 1 Page - Micro Commercial Components |
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2SA1213-O Arkusz danych(HTML) 1 Page - Micro Commercial Components |
1 / 4 page PNP Silicon Epitaxial Transistors Features Low Saturation voltage: VCE(sat)=0.5V(max.)(IC=1.0A) Small flat package PC=1.0 to 2.0W(mounted on ceramic substrate) High Speed Switching Time : tstg Maximum Ratings Symbol Rating Rating Unit VCEO Collector-Emitter Voltage -50 V VCBO Collector-Base Voltage -50 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current -2.0 A IB Base Current -0.4 A PC Collector power dissipation 0.5 1.0* W TJ Junction Temperature 150 TSTG Storage Temperature -55 to +150 * Mounted on ceramic substrate (250mm 2 x 0.8t) Electrical Characteristics @ 25 Unless Otherwise Specified Symbol Parameter Min Typ Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage (IC=10mAdc, IB=0) -50 --- --- Vdc ICBO Collector-Base Cutoff Current (VCB=50Vdc,IE=0) --- --- -0.1 uAdc IEBO Emitter-Base Cutoff Current (VEB=5.0Vdc, IC=0) --- --- -0.1 uAdc ON CHARACTERISTIC hFE(1) DC Current Gain (IC=0.5Adc, VCE=2.0Vdc) 70 --- 240 --- hFE(2) DC Current Gain * (IC=2.0Adc, VCE=2.0Vdc) 20 --- --- --- VCE(sat) Collector-Emitter Saturation Voltage (IC=1.0Adc, IB=0.05Adc) --- --- -0.5 Vdc VBE(sat) Base-Emitter Saturation Voltage (IC=1.0Adc,IB=0.05Adc) --- --- -1.2 Vdc fT Transition Frequency (VCE=2.0Vdc, IC=0.5Adc) 100 120 --- MHz Cob Collector output capacitance (VCB=10Vdc, f=1.0MHz) --- 40 --- pF Revision: A 20 11/01/01 omponents 20736 Marilla Street Chatsworth !"# $% !"# MCC 1. Base 2. Collector 3. Emitter =1.0µs(typ.) CLASSIFICATION OF HFE(1) Rank O Range 70-140 Marking NO B A E D G H F K J C 12 3 • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 TM Micro Commercial Components 1 20-240 Y NY 2SA1213-O 2SA1213-Y SOT-89 www.mccsemi.com 1 of 4 |
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Podobny opis - 2SA1213-O |
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