2SC4466_01 datasheet(1/1 Pages) SANKEN

Numer części	2SC4466

Szczegółowy opis	Silicon NPN Triple Diffused Planar Transistor

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Producent	SANKEN [Sanken electric]

Strona internetowa	http://www.sanken-ele.co.jp/en

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107

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1693)

Application : Audio and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

Ratings

120

80

6

3

60(Tc=25°C)

150

–55 to +150

Unit

V

A

W

°C

sAbsolute maximum ratings

sElectrical Characteristics

Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

Ratings

10max

80min

50min

∗

1.5max

20typ

110typ

Unit

µA

V

MHz

pF

Conditions

VCB=120V

VEB=6V

IC=50mA

VCE=4V, IC=2A

IC=2A, IB=0.2A

VCE=12V, IE=–0.5A

VCB=10V, f=1MHz

2SC4466

(Ta=25°C)

sTypical Switching Characteristics (Common Emitter)

VCC

(V)

30

RL

(

Ω)

10

IC

(A)

3

VBB2

(V)

–5

IB2

(A)

–0.3

ton

(

µs)

0.16typ

tstg

(

µs)

2.60typ

tf

(

µs)

0.34typ

IB1

(A)

0.3

VBB1

(V)

10

External Dimensions MT-100(TO3P)

15.6±0.4

9.6

ø3.2±0.1

2

3

1.05

+0.2

-0.1

BE

5.45±0.1

C

4.8±0.2

0.65

+0.2

-0.1

1.4

2.0±0.1

a

b

Weight : Approx 6.0g

a. Part No.

b. Lot No.

I C– V CE Characteristics (Typical)

h FE– I C Characteristics (Typical)

h FE– I C Temperature Characteristics (Typical)

θj-a–t Characteristics

I C– V BE Temperature Characteristics (Typical)

V CE(sat) – I B Characteristics (Typical)

Pc – T a Derating

Safe Operating Area (Single Pulse)

f T– I E Characteristics (Typical)

0

3

2

1

0

0.5

1.0

1.5

Base Current I B(A)

I C=6A

2A

4A

0

6

4

2

02

1

Base-Emittor Voltage V BE(V)

(V CE=4V)

60

40

20

3.5

0

2 5

5 0

7 5

100

125

150

Ambient Temperature Ta(˚C)

Without Heatsink

5

1 0

100

50

0.1

1

0.5

10

20

5

Collector-Emitter Voltage V CE(V)

Without Heatsink

Natural Cooling

DC

10ms

1ms

100ms

0.02

0.1

1

0.5

5 6

30

50

100

300

Collector Current I C(A)

(V CE=4V)

Typ

0

2

4

6

2

13

4

Collector-Emitter Voltage V CE(V)

80mA

50mA

30mA

20mA

150mA

100mA

I B=10mA

200mA

(V CE=4V)

0.02

0.5

6

5

1

20

50

200

100

0.1

Collector Current I C(A)

125˚C

25˚C

–30˚C

–0.02

–0.1

–1

–6

0

20

10

40

30

(V CE=12V)

Emitter Current I E(A)

Typ

0.3

1

5

0.5

1

1 0

100

1000

2000

Time t(ms)

∗hFE Rank O(50to100), P(70to140), Y(90to180)

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