2SD1796_01 datasheet(1/1 Pages) SANKEN

Numer części	2SD1796

Szczegółowy opis	Silicon NPN Triple Diffused Planar Transistor

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Producent	SANKEN [Sanken electric]

Strona internetowa	http://www.sanken-ele.co.jp/en

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139

2SD1796

I C– V CE Characteristics (Typical)

h FE– I C Characteristics (Typical)

h FE– I C Temperature Characteristics (Typical)

θj-a–t Characteristics

Pc – T a Derating

0

1

2

3

4

2

13

4

Collector-Emitter Voltage V CE(V)

IB

=20mA

0.3mA

1.0mA

0.4mA

0.5mA

0.8mA

0.6mA

Safe Operating Area (Single Pulse)

f T– I E Characteristics (Typical)

4

1

0.1

0.5

0.05

50

500

100

1000

10000

20000

5000

Collector Current I C(A)

(V CE=4V)

–0.01

–0.1

–1

–4

0

20

40

120

100

60

80

(V CE=10V)

Emitter Current I E(A)

Typ

10

50

3

5

100

0.05

0.1

1

0.5

10

5

Collector-Emitter Voltage V CE(V)

Without Heatsink

Natural Cooling

DC

10ms

0.5

1

5

1

1 0

100

1000

Time t(ms)

Typ

V CB=10V

I E=–2V

V CE(sat) – I B Characteristics (Typical)

0

3

2

1

0.2

0.5

5

1 0

1

100

50

Base Current I B(mA)

IC=4A

I C=3A

I C=2A

I C=1A

I C– V BE Temperature Characteristics (Typical)

02

1

Base-Emittor Voltage V BE(V)

(V CE=2V)

0

3

4

2

1

Collector Current I C(A)

0.05

0.5

1

4

0.1

100

50

500

1000

5000

10000

20000

(V CE=4V)

125˚C

25˚C

–30˚C

30

20

10

2

0

2 5

5 0

7 5

100

125

150

Ambient Temperature Ta(˚C)

With

Infinite

heatsink

Without Heatsink

150x150x2

50x50x2

10 0 x10

0 x2

Natural Cooling

Silicone Grease

Heatsink: Aluminum

in mm

Silicon NPN Triple Diffused Planar Transistor

Application : Driver for Solenoid, Relay and Motor and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

Ratings

60±10

6

4

0.5

25(Tc=25°C)

150

–55 to +150

Unit

V

A

W

°C

sAbsolute maximum ratings

sElectrical Characteristics

Ratings

10max

60±10

2000min

1.5max

60typ

45 typ

Unit

µA

mA

V

MHz

pF

Conditions

VCB=50V

VEB=6V

IC=10mA

VCE=4V, IC=3A

IC=3A, IB=10mA

VCE=12V, IE=–0.2A

VCB=10V, f=1MHz

(Ta=25°C)

Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

External Dimensions FM20(TO220F)

ø3.3±0.2

10.1±0.2

2.54

1.35±0.15

0.85

+0.2

-0.1

1.35±0.15

2.2±0.2

4.2±0.2

2.8

c0.5

2.4±0.2

0.45

+0.2

-0.1

BE

C

a

b

sTypical Switching Characteristics (Common Emitter)

VCC

(V)

30

RL

(

Ω)

10

IC

(A)

3

VBB2

(V)

–5

IB2

(mA)

–10

ton

(

µs)

1.0typ

tstg

(

µs)

4.0typ

tf

(

µs)

1.5typ

IB1

(mA)

10

VBB1

(V)

10

Weight : Approx 2.0g

a. Part No.

b. Lot No.

Built-in Avalanche Diode

for Surge Absorbing

Darlington

B

C

E

(3 k

Ω)(150Ω)

Equivalent

circuit

Podobny numer części - 2SD1796_01

Producent	Numer części	Arkusz danych	Szczegółowy opis
Sanken electric	2SD1796	26Kb / 1P	Silicon NPN Triple Diffused Planar Transistor(Driver for Solenoid, Relay and Motor and General Purpose)
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Podobny opis - 2SD1796_01

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