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ZY82 Arkusz danych(PDF) 3 Page - Diotec Semiconductor |
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ZY82 Arkusz danych(HTML) 3 Page - Diotec Semiconductor |
3 / 3 page ZY1 ... ZY200 (2 W) © Diotec Semiconductor AG http://www.diotec.com/ 3 120 100 80 60 40 20 0 [%] P tot Power dissipation versus ambient temperature ) Verlustleistung in Abh. von d. Umgebungstemp. ) 1 1 [°C] T A 150 100 50 0 10 10 1 10 10 2 -1 -2 [A] I F Forward characteristics (typical values) Durchlasskennlinien (typische Werte) 0.4 V F 0.8 1.0 1.2 1.4 [V] 1.8 T = 25°C j T = 125°C j 30a-(1a-1.1v) [pF] [V] C j V Z T = 25°C f = 1.0 MHz j V = 0V R V = 4V R V = 20V R V = 40V R Junction capacitance vs. zener voltage (typical) Sperrschichtkapazität in Abh. v.d. Zenerspg. (typ.) Typ. thermal resistance vs lead length Typ. therm. Widerst. in Abh. der Anschlusslänge 50 50 40 30 20 10 0 R thL [K/W] [mm] L 12 8 4 0 L 0 2 3 4 5 6 7 8 10 [V] V Z [mA] 50 150 0 100 I Z Typical breakdown characteristic Typische Abbruchspannung – tested with pulses – gemessen mit Impulsen 5,6 6,2 6,8 7,5 8,2 9,1 I ZT I Zmax 1 T = 25°C j I = 5 mA Z 10 18 24 30 36 43 51 62 56 68 75 82 91 100 T = 25°C j I ZT I Zmax Typical breakdown characteristic Typische Abbruchspannung – tested with pulses – gemessen mit Impulsen |
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