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FM21L16 Arkusz danych(PDF) 11 Page - Ramtron International Corporation

Numer części FM21L16
Szczegółowy opis  2Mbit F-RAM Memory
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Producent  RAMTRON [Ramtron International Corporation]
Strona internetowa  http://www.ramtron.com
Logo RAMTRON - Ramtron International Corporation

FM21L16 Arkusz danych(HTML) 11 Page - Ramtron International Corporation

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FM21L16 - 128Kx16 FRAM
Rev. 2.0
Apr. 2011
Page 11 of 15
Power Cycle and Sleep Mode Timing (TA = -40° C to + 85° C, VDD = 2.7V to 3.6V unless otherwise specified)
Symbol
Parameter
Min
Max
Units
Notes
tPU
Power Up (after VDD min. is reached) to First Access Time
450
-
µs
tPD
Last Write (/WE high) to Power Down Time
0
-
µs
tVR
VDD Rise Time
50
-
µs/V
1,2
tVF
VDD Fall Time
100
-
µs/V
1,2
tZZH
/ZZ Active to DQ Hi-Z Time
-
20
ns
tWEZZ
Last Write to Sleep Mode Entry Time
0
-
µs
tZZL
/ZZ Active Low Time
1
-
µs
tZZEN
Sleep Mode Entry Time (/ZZ low to /CE don’t care)
-
0
µs
tZZEX
Sleep Mode Exit Time (/ZZ high to 1st access after wakeup)
-
450
µs
Notes
1.
Slope measured at any point on VDD waveform.
2.
Ramtron cannot test or characterize all VDD power ramp profiles. The behavior of the internal circuits is difficult to predict
when VDD is below the level of a transistor threshold voltage. Ramtron strongly recommends that VDD power up faster than
100ms through the range of 0.4V to 1.0V.
Data Retention (VDD = 2.7V to 3.6V)
Parameter
Min
Units
Notes
Data Retention
10
Years
AC Test Conditions
Input Pulse Levels
0 to 3V
Input and Output Timing Levels
1.5V
Input Rise and Fall Times
3 ns
Output Load Capacitance
30pF
Read Cycle Timing 1 (/CE low, /OE low)
Read Cycle Timing 2 (/CE-controlled)


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