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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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FM25L04B Arkusz danych(PDF) 10 Page - Ramtron International Corporation |
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FM25L04B Arkusz danych(HTML) 10 Page - Ramtron International Corporation |
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10 / 14 page  FM25L04B - 4Kb 3V SPI F-RAM Rev. 1.3 Feb. 2011 Page 10 of 14 AC Parameters (TA = -40° C to + 85° C, VDD = 2.7V to 3.6V, CL = 30pF, unless otherwise specified) Symbol Parameter Min Max Units Notes fCK SCK Clock Frequency 0 20 MHz tCH Clock High Time 22 ns 1 tCL Clock Low Time 22 ns 1 tCSU Chip Select Setup 10 ns tCSH Chip Select Hold 10 ns tOD Output Disable Time 20 ns 2 tODV Output Data Valid Time 20 ns tOH Output Hold Time 0 ns tD Deselect Time 60 ns tR Data In Rise Time 50 ns 2,3 tF Data In Fall Time 50 ns 2,3 tSU Data Setup Time 5 ns tH Data Hold Time 5 ns tHS /HOLD Setup Time 10 ns tHH /HOLD Hold Time 10 ns tHZ /HOLD Low to Hi-Z 20 ns 2 tLZ /HOLD High to Data Active 20 ns 2 Notes 1. tCH + tCL = 1/fCK. 2. For Clock High Time tCH ≤ 35 ns, the parameter tODV is extended such that tCH + tODV ≤ 65 ns. 3. This parameter is characterized but not 100% tested. 4. Rise and fall times measured between 10% and 90% of waveform. Capacitance (TA = 25° C, f=1.0 MHz, VDD = 3.3V) Symbol Parameter Min Max Units Notes CO Output Capacitance (SO) - 8 pF 1 CI Input Capacitance - 6 pF 1 Notes 1. This parameter is characterized but not 100% tested. 2. Slope measured at any point on VDD waveform. AC Test Conditions Input Pulse Levels 10% and 90% of VDD Input rise and fall times 5 ns Input and output timing levels 0.5 VDD Output Load Capacitance 30 pF Data Retention Symbol Parameter Min Max Units Notes TDR @ +85ºC 10 - Years @ +80ºC 19 - Years @ +75ºC 38 - Years |
Podobny numer części - FM25L04B |
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Podobny opis - FM25L04B |
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