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BA682 Arkusz danych(PDF) 2 Page - Vishay Siliconix |
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BA682 Arkusz danych(HTML) 2 Page - Vishay Siliconix |
2 / 3 page BA682, BA683 Vishay Semiconductors Band Switching Diodes Document Number: 85530 For technical questions within your region, please contact one of the following: www.vishay.com Rev. 1.6, 16-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 2 TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified Fig. 1 - Dynamic Forward Resistance vs. Forward Current Fig. 2 - Diode Capacitance vs. Reverse Voltage PACKAGE DIMENSIONS in millimeters (inches): MiniMELF SOD-80 0.1 1 10 0.1 1 10 100 100 94 9074 IF - Forward Current (mA) BA683 BA682 f = 200 MHz T j = 25 °C 0.1 0 0.5 1.0 1.5 2.0 3.0 100 10 94 9075 2.5 VR - Reverse Voltage (V) 1 BA682 BA683 f = 200 MHz T j = 25 °C Cathode indification 0.47 (0.019) max. 2.5 (0.098) max. 1.25 (0.49) min. 3.7 (0.146) 3.3 (0.130) 5 (0.197) ref. Foot print recommendation: * * The gap between plug and glass can be either on cathode or anode side Document no.:6.560-5005.01-4 Rev. 8 - Date: 07.June.2006 96 12070 |
Podobny numer części - BA682_10 |
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Podobny opis - BA682_10 |
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