2SC3357 datasheet(2/6 Pages) ISC

Numer części	2SC3357

Szczegółowy opis	isc Silicon NPN RF Transistor

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INCHANGE Semiconductor

isc RF Product Specification

isc Silicon NPN RF Transistor

2SC3357

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

ICBO

Collector Cutoff Current

VCB= 10V; IE= 0

1.0

μA

IEBO

Emitter Cutoff Current

VEB= 1V; IC= 0

1.0

μA

hFE

DC Current Gain

IC= 20mA ; VCE= 10V

50

300

fT

Current-Gain—Bandwidth Product

IC= 20mA ; VCE= 10V

6.5

GHz

Cre

Feed-Back Capacitance

IE= 0 ; VCB= 10V;f= 1.0MHz

0.65

1.0

pF

︱S21e︱

2

Insertion Power Gain

IC= 20mA ; VCE= 10V;f= 1.0GHz

9

dB

NF

Noise Figure

IC= 7mA ; VCE= 10V;f= 1.0GHz

1.1

dB

NF

Noise Figure

IC= 40mA ; VCE= 10V;f= 1.0GHz

1.8

3.0

dB

hFE Classification

Marking

RH

RF

RE

hFE

50-100

80-160

125-250

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