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BYG10G Arkusz danych(PDF) 3 Page - Vishay Siliconix

Numer części BYG10G
Szczegółowy opis  Standard Avalanche SMD Rectifier
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Producent  VISHAY [Vishay Siliconix]
Strona internetowa  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

BYG10G Arkusz danych(HTML) 3 Page - Vishay Siliconix

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BYG10D thru BYG10Y
Vishay General Semiconductor
Document Number: 88957
Revision: 03-Jun-09
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Figure 1. Forward Current vs. Forward Voltage
Figure 2. Max. Average Forward Current vs. Ambient Temperature
Figure 3. Reverse Current vs. Junction Temperature
0.001
0.01
0.1
1
10
100
0
0.5
1.0
1.5
2.0
2.5
3.0
Forward Voltage (V)
T
J = 150 °C
T
J = 25 °C
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
204060
80
100
120
140
160
Ambient Temperature (°C)
RθJA ≤ 125 K/W
RθJA ≤ 150 K/W
V
R = VRRM
Half Sine-Wave
RθJA ≤ 25 K/W
1
10
100
1000
25
50
75
100
125
150
Junction Temperature (°C)
V
R = VRRM
Figure 4. Max. Reverse Power Dissipation vs. Junction Temperature
Figure 5. Diode Capacitance vs. Reverse Voltage
Figure 6. Reverse Recovery Time vs. Forward Current
0
50
100
150
200
250
300
350
400
25
50
75
100
125
150
V
R = VRRM
P
R - Limit at 100 % VR
Junction Temperature (°C)
P
R - Limit at 80 % VR
0
5
10
15
20
25
30
0.1
1
10
100
f = 1 MHz
Reverse Voltage (V)
0
0
1000
2000
3000
4000
5000
0.2
0.4
0.6
0.8
Forward Current (A)
1.0
T
A = 100 °C
T
A = 125 °C
T
A = 25 °C
T
A = 75 °C
T
A = 50 °C
I
R = 0.5 A, iR = 0.125 A


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