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2SC3850 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC3850 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC3850 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.5A ;L=25mH 400 V VCEsat Collector-emitter saturation voltage IC=10A ;IB=2A 1.0 V VBEsat Base-emitter saturation voltage IC=10A ;IB=2A 1.5 V ICBO Collector cut-off current VCB=500V ;IE=0 100 μA IEBO Emitter cut-off current VEB=7V; IC=0 100 μA hFE-1 DC current gain IC=2A ; VCE=5V 15 hFE-2 DC current gain IC=10A ; VCE=5V 10 fT Transition frequency IC=1A ; VCE=10V 15 MHz Switching times ton Turn-on time 1.0 μs ts Storage time 2.5 μs tf Fall time IC=10A IB1=-IB2=2A VCC=125V 1.0 μs |
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