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2SC4160 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC4160 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 4 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC4160 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; RBE=∞ 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 500 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.4A 0.8 V VBEsat Base-emitter saturation voltage IC=2A ;IB=0.4A 1.5 V ICBO Collector cut-off current VCB=400V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=0.4A ; VCE=5V 15 50 hFE-2 DC current gain IC=2A ; VCE=5V 10 hFE-3 DC current gain IC=10mA ; VCE=5V 10 COB Output capacitance IE=0; VCB=10V;f=1MHz 50 pF fT Transition frequency IC=0.4A ; VCE=10V 20 MHz Switching times ton Turn-on time 0.5 μs ts Storage time 2.5 μs tf Fall time IC=3A; IB1=0.6A IB2=-1.2A VCC=200V ,RL=66.6Ω 0.3 μs hFE-1 Classifications L M N 15-30 20-40 30-50 |
Podobny numer części - 2SC4160 |
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Podobny opis - 2SC4160 |
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