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LB1930M Arkusz danych(PDF) 2 Page - Sanyo Semicon Device |
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LB1930M Arkusz danych(HTML) 2 Page - Sanyo Semicon Device |
2 / 5 page LB1930M No.6068-2/5 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Allowable power dissipation Pd max Mounted on a specified board * 800 mW Operating temperature Topr -30 to +85 °C Storage temperature Tstg -55 to +150 °C * Specified board: 114.3mm × 76.1mm × 1.5mm, glass epoxy board. Allowable Operating Ranges at Ta = 25 °C Parameter Symbol Conditions Ratings Unit Supply voltage VCC 2.2 to 10.8 V High-level input voltage VIH 2.0 to 10 V Low-level input voltage VIL -0.3 to +0.3 V Electrical Characteristics at Ta = 25°C, VCC = 3V Parameter Symbol Conditions Ratings Unit min typ max Current drain ICC1 Standby mode 0.1 5 μA ICC2 Forward or reverse drive operation 15 21 mA ICC3 Braking 22 31 mA Output saturation voltage VO(sat)1 Forward or reverse drive: High side + low side, IO = 200mA 0.25 0.35 V VO(sat)2 Forward or reverse drive: High side + low side, IO = 500mA 0.55 0.75 V VO(sat)3 Forward or reverse drive: High side only, IO = 200mA 0.15 0.25 V Input current IIN VIN = 5V 70 95 μA Thermal detection operating temperature THD Design guarantee value* 150 180 200 °C Spark killer diode Forward voltage VSF IO = 200mA 0.9 1.7 V Reverse current IRS VOUT = 10V 0.1 5 μA * Design guarantee value, Do not measurement. Package Dimensions unit : mm (typ) 3086B SANYO : MFP10S(225mil) 1 10 5 6 (0.5) 1.0 0.35 5.0 0.15 -20 0 20 40 60 80 100 0 1000 800 600 400 200 Pd max -- Ta -30 85 416 Ambient temperature, Ta -- °C Spesified board: 114.3 ×76.1×1.5mm3 glass epoxy board. |
Podobny numer części - LB1930M_11 |
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Podobny opis - LB1930M_11 |
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