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2SD1047 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1047 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 4 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1047 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 140 V V(BR)CBO Collector-base breakdown voltage IC=5mA ;IE=0 160 V V(BR)EBO Emitter-base breakdown voltage IE=5mA ;IC=0 6 V VCEsat Collector-emitter saturation voltage IC=5A ;IB=0.5A 2.5 V VBE Base-emitter on voltage IC=1A;VCE=5V 1.5 V ICBO Collector cut-off current VCB=80V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=4V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=5V 60 200 hFE-2 DC current gain IC=6A ; VCE=5V 20 fT Transition frequency IC=1A ; VCE=5V 15 MHz COB Collector output capacitance f=1MHz;VCB=10V 210 pF Switching times ton Turn-on time 0.26 μs ts Storage time 6.88 μs tf Fall time IC=1.0A; IB1=-IB2=0.1A VCC=20V ,RL=20Ω 0.68 μs hFE-1 Classifications D E 60-120 100-200 |
Podobny numer części - 2SD1047 |
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Podobny opis - 2SD1047 |
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