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2SD1453 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1453 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1453 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=200mA; IC=0 6 V VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.8A 5.0 V VBEsat Base-emitter saturation voltage IC=2.5A; IB=0.8A 1.5 V ICES Collector cut-off current VCE=1500V; RBE=∞ 0.5 mA hFE DC current gain IC=0.3A ; VCE=5V 6 VF Diode forward voltage IF=3A 2.2 V tf Fall time ICP=2.75A; IB1=0.6A; IB2≈-1.3A 0.8 μs |
Podobny numer części - 2SD1453 |
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Podobny opis - 2SD1453 |
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