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2SD1563 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1563 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1563 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 B 120 V V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA; IE= 0 120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50μA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A B 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.1A B 1.5 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 1.0 μA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 1.0 μA hFE DC Current Gain IC= 0.1A; VCE= 5V 56 390 fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 5V 80 MHz COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz 20 pF hFE Classifications N P Q R 56-120 82-180 120-270 180-390 isc Website:www.iscsemi.cn 2 |
Podobny numer części - 2SD1563 |
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Podobny opis - 2SD1563 |
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