Zakładka z wyszukiwarką danych komponentów |
|
2SD1602 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
2SD1602 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1602 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; RBE= ∞ 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 4mA B 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA B 3.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 2A; IB= 4mA B 2.0 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 4A; IB= 40mA B 3.5 V ICBO Collector Cutoff Current VCB= 60V; IE= 0 100 μA ICEO Collector Cutoff Current VCE= 50V; RBE= ∞ 10 μA hFE DC Current Gain IC= 2A; VCE= 3V 1000 20000 VECF C-E Diode Forward Voltage IF= 4A 3.0 V Switching times ton Turn-on Time 1.0 μs tstg Storage Time 6.0 μs tf Fall Time IC= 2A, IB1= -IB2= 4mA 1.0 μs isc Website:www.iscsemi.cn 2 |
Podobny numer części - 2SD1602 |
|
Podobny opis - 2SD1602 |
|
|
Link URL |
Polityka prywatności |
ALLDATASHEET.PL |
Czy Alldatasheet okazała się pomocna? [ DONATE ] |
O Alldatasheet | Reklama | Kontakt | Polityka prywatności | Linki | Lista producentów All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |