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BD238 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BD238 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon PNP Power Transistors BD234 BD236 BD238 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=-1A; IB=-0.1A -0.6 V VBE Base-emitter on voltage IC=-1A ; VCE=-2V -1.3 V BD234 -45 BD236 -60 VCEO(SUS) Collector-emitter sustaining voltage BD238 IC=-0.1A; IB=0 -80 V BD234 VCB=-45V; IE=0 BD236 VCB=-60V; IE=0 ICBO Collector cut-off current BD238 VCB=-100V; IE=0 -100 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -1 mA hFE-1 DC current gain IC=-150mA ; VCE=-2V 40 hFE-2 DC current gain IC=-1A ; VCE=-2V 25 fT Transition frequency IC=-250mA; VCE=-10V 3 MHz |
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