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BDW40 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BDW40 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDW40 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 60 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 10mA B 2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 50mA 3.0 V VBE(on) Base-Emitter On Voltage IC= 10A; VCE= 4V 3.0 V ICBO Collector Cutoff Current VCB= 60V; IE= 0 1.0 mA ICEO Collector Cutoff Current VCE= 30V; IB= 0 B 2.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 2.0 mA hFE-1 DC Current Gain IC= 5A; VCE= 4V 1000 hFE-2 DC Current Gain IC= 10A; VCE= 4V 250 fT Current-Gain—Bandwidth Product IC= 3A; VCE= 3V; ftest= 1MHz 4 MHz COB Output Capacitance IE= 0; VCB= 10V; ftest= 0.1MHz 200 pF isc Website:www.iscsemi.cn 2 |
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