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BDW40 Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited

Numer części BDW40
Szczegółowy opis  isc Silicon NPN Darlington Power Transistor
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Producent  ISC [Inchange Semiconductor Company Limited]
Strona internetowa  http://www.iscsemi.cn
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BDW40 Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
BDW40
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 60V(Min)
·High DC Current Gain
: hFE= 1000(Min) @IC= 5A
·Low Collector Saturation Voltage
: VCE(sat)= 2.0V(Max.)@ IC= 5.0A
= 3.0V(Max.)@ IC= 10A
·Complement to Type BDW45
APPLICATIONS
·Designed for general purpose and low speed switching
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
15
A
IB
B
Base Current-Continuous
0.5
A
PC
Collector Power Dissipation
@ TC=25℃
85
W
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.47
℃/W
isc Website:www.iscsemi.cn


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