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BDW43 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited

Numer części BDW43
Szczegółowy opis  isc Silicon NPN Darlington Power Transistor
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Producent  ISC [Inchange Semiconductor Company Limited]
Strona internetowa  http://www.iscsemi.cn
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BDW43 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
BDW43
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 30mA; IB= 0
120
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 5A; IB= 10mA
B
2.0
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 10A; IB= 50mA
3.0
V
VBE(on)
Base-Emitter On Voltage
IC= 10A; VCE= 4V
3.0
V
ICBO
Collector Cutoff Current
VCB= 120V; IE= 0
1.0
mA
ICEO
Collector Cutoff Current
VCE= 60V; IB= 0
B
2.0
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
2.0
mA
hFE-1
DC Current Gain
IC= 5A; VCE= 4V
1000
hFE-2
DC Current Gain
IC= 10A; VCE= 4V
250
fT
Current-Gain—Bandwidth Product
IC= 3A; VCE= 3V; ftest= 1MHz
4
MHz
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 0.1MHz
200
pF
isc Website:www.iscsemi.cn
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