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BDW51C Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BDW51C Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 3 page Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDW51C DESCRIPTION ・With TO-3 package ・Complement to type BDW52C ・Excellent safe operating area APPLICATIONS ・For use in power linear and switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 15 A ICM Collector current-peak 20 A IB Base current 7 A PC Collector power dissipation TC=25℃ 125 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance junction to case 1.4 ℃/W Fig.1 simplified outline (TO-3) and symbol |
Podobny numer części - BDW51C |
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Podobny opis - BDW51C |
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