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BDW52A Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited

Numer części BDW52A
Szczegółowy opis  isc Silicon PNP Power Transistor
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BDW52A Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
BDW52/A/B/C
DESCRIPTION
·Collector Current -IC= -15A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -45V(Min)- BDW52; -60V(Min)- BDW52A
-80V(Min)- BDW52B; -100V(Min)- BDW52C
·Complement to Type BDW51/A/B/C
APPLICATIONS
·Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDW52
-45
BDW52A
-60
BDW52B
-80
VCBO
Collector-Base
Voltage
BDW52C
-100
V
BDW52
-45
BDW52A
-60
BDW52B
-80
VCEO
Collector-Emitter
Voltage
BDW52C
-100
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-15
A
ICM
Collector Current-Peak
-20
A
IB
B
Base Current
-7
A
PC
Collector Power Dissipation
@ TC=25℃
125
W
TJ
Junction Temperature
200
Tstg
Storage Temperature Range
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.4
℃/W
isc Website:www.iscsemi.cn


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