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BDW52C Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BDW52C Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon PNP Power Transistors BDW52C CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=-0.1A ;IB=0 -100 V VCEsat-1 Collector-emitter saturation voltage IC=-5A; IB=-0.5A -1.0 V VCEsat-2 Collector-emitter saturation voltage IC=-10A; IB=-2.5A -3.0 V VBEsat Base-emitter saturation voltage IC=-10A; IB=-2.5A -2.5 V VBE Base-emitter on voltage IC=-5A ; VCE=-4V -1.5 V ICEO Collector cut-off current VCE=-50V; IB=0 -1.0 mA ICBO Collector cut-off current VCB=-100V; IE=0 TC=150℃ -0.5 -5.0 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -2.0 mA hFE-1 DC current gain IC=-5A ; VCE=-4V 20 150 hFE-2 DC current gain IC=-10A ; VCE=-4V 5 fT Transition frequency IC=-0.5A ; VCE=-4V 3 MHz |
Podobny numer części - BDW52C |
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Podobny opis - BDW52C |
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