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BDW63B Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited

Numer części BDW63B
Szczegółowy opis  isc Silicon NPN Darlington Power Transistor
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Producent  ISC [Inchange Semiconductor Company Limited]
Strona internetowa  http://www.iscsemi.cn
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BDW63B Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
BDW63/A/B/C/D
DESCRIPTION
·Collector Current -IC= 6A
·High DC Current Gain-hFE= 750(Min.)@ IC= 2A
·Complement to Type BDW64/A/B/C/D
APPLICATIONS
·Designed for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDW63
45
BDW63A
60
BDW63B
80
BDW63C
100
VCBO
Collector-Base
Voltage
BDW63D
120
V
BDW63
45
BDW63A
60
BDW63B
80
BDW63C
100
VCEO
Collector-Emitter
Voltage
BDW63D
120
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
6
A
IB
B
Base Current-Continuous
0.1
A
Collector Power Dissipation
@ Ta=25℃
2
PC
Collector Power Dissipation
@ TC=25℃
60
W
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
2.08
℃/W
Rth j-c
Thermal Resistance, Junction to Case
62.5
℃/W
isc Website:www.iscsemi.cn


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