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BDW64C Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited

Numer części BDW64C
Szczegółowy opis  isc Silicon PNP Darlington Power Transistor
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Producent  ISC [Inchange Semiconductor Company Limited]
Strona internetowa  http://www.iscsemi.cn
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BDW64C Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistor
BDW64/A/B/C/D
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
BDW64
-45
BDW64A
-60
BDW64B
-80
BDW64C
-100
V(BR)CEO
Collector-Emitter
Breakdown Voltage
BDW64D
IC= -30mA; IB= 0
-120
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= -2A; IB= -12mA
B
-2.5
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= -6A; IB= -60mA
B
-4.0
V
VBE(on)
Base-Emitter On Voltage
IC= -2A; VCE= -3V
-2.5
V
VECF
C-E Diode Forward Voltage
IF= -6A
-3.5
V
BDW64
VCE= -30V; IB= 0
B
BDW64A
VCE= -30V; IB= 0
B
BDW64B
VCE= -40V; IB= 0
B
BDW64C
VCE= -50V; IB= 0
B
ICEO
Collector Cutoff Current
BDW64D
VCE= -60V; IB= 0
B
-0.5
mA
BDW64
VCB= -45V; IE= 0
VCB= -45V; IE= 0; TJ= 150℃
-0.2
-5.0
BDW64A
VCB= -60V; IE= 0
VCB= -60V; IE= 0; TJ= 150℃
-0.2
-5.0
BDW64B
VCB= -80V; IE= 0
VCB= -80V; IE= 0; TJ= 150℃
-0.2
-5.0
BDW64C
VCB= -100V; IE= 0
VCB= -100V; IE= 0; TJ= 150℃
-0.2
-5.0
ICBO
Collector Cutoff Current
BDW64D
VCB= -120V; IE= 0
VCB= -120V; IE= 0; TJ= 150℃
-0.2
-5.0
mA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-2.0
mA
hFE-1
DC Current Gain
IC= -2A; VCE= -3V
750
20000
hFE-2
DC Current Gain
IC= -6A; VCE= -3V
100
Switching times
ton
Turn-on Time
1.0
μs
toff
Turn-off Time
IC= -3A; IB1= -IB2= -12mA;
VBE(off)= -4.5V, RL=10Ω
5.0
μs
isc Website:www.iscsemi.cn
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