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BDW94A Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BDW94A Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon PNP Power Transistors BDW94/A/B/C CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDW94 -45 BDW94A -60 BDW94B -80 VCEO(SUS) Collector-emitter sustaining voltage BDW94C IC=-0.1A, IB=0 -100 V VCEsat-1 Collector-emitter saturation voltage IC=-5A ,IB=-20mA -2.0 V VCEsat-2 Collector-emitter saturation voltage IC=-10A ,IB=-0.1A -3.0 V VBEsat-1 Base-emitter saturation voltage IC=-5A ,IB=-20mA -2.5 V VBEsat-2 Base-emitter saturation voltage IC=-10A ,IB=-0.1A -4.0 V BDW94 VCB=-45V, IE=0 BDW94A VCB=-60V, IE=0 BDW94B VCB=-80V, IE=0 ICBO Collector cut-off current BDW94C VCB=-100V, IE=0 -0.1 mA BDW94 VCE=-45V, IB=0 BDW94A VCE=-60V, IB=0 BDW94B VCE=-80V, IB=0 ICEO Collector cut-off current BDW94C VCE=-100V, IB=0 -1.0 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -2.0 mA hFE-1 DC current gain IC=-3A ; VCE=-3V 1000 hFE-2 DC current gain IC=-5A ; VCE=-3V 750 20000 hFE-3 DC current gain IC=-10A ; VCE=-3V 100 VF-1 Forward diode voltage IF=-5A -2.0 V VF-2 Forward diode voltage IF=-10A -4.0 V |
Podobny numer części - BDW94A |
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Podobny opis - BDW94A |
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