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BDW93C Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited

Numer części BDW93C
Szczegółowy opis  isc Silicon NPN Power Transistor
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BDW93C Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BDW93/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
BDW93
45
BDW93A
60
BDW93B
80
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BDW93C
IC= 100mA; IB= 0
100
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 5A; IB= 20mA
B
2.0
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 10A; IB= 0.1A
3.0
V
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= 5A; IB= 20mA
B
2.5
V
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= 10A; IB= 0.1A
4.0
V
BDW93
VCB= 45V; IE= 0
BDW93A
VCB= 60V; IE= 0
BDW93B
VCB= 80V; IE= 0
ICBO
Collector
Cutoff Current
BDW93C
VCB= 100V; IE= 0
0.1
mA
BDW93
VCE= 45V; IB= 0
B
BDW93A
VCE= 60V; IB= 0
B
BDW93B
VCE= 80V; IB= 0
B
ICEO
Collector
Cutoff Current
BDW93C
VCE= 100V; IB= 0
1.0
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
2.0
mA
hFE-1
DC Current Gain
IC= 3A; VCE= 3V
1000
hFE-2
DC Current Gain
IC= 5A; VCE= 3V
750
20000
hFE-3
DC Current Gain
IC= 10A; VCE= 3V
100
VECF-1
C-E Diode Forward Voltage
IF= 5A
2.0
V
VECF-2
C-E Diode Forward Voltage
IF= 10A
4.0
V
isc Website:www.iscsemi.cn
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