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BAS125-06W Arkusz danych(PDF) 1 Page - Siemens Semiconductor Group

Numer części BAS125-06W
Szczegółowy opis  Preliminary data Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping application)
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Producent  SIEMENS [Siemens Semiconductor Group]
Strona internetowa  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BAS125-06W Arkusz danych(HTML) 1 Page - Siemens Semiconductor Group

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Semiconductor Group
1
Dec-20-1996
BAS 125W
Preliminary data
Silicon Schottky Diodes
• For low-loss, fast-recovery, meter protection,
bias isolation and clamping application
• Integrated diffused guard ring
• Low forward voltage
BAS 125-04W
BAS 125-04W
BAS 125-06W
ESD: ElectroStatic Discharge sensitive device, observe handling precautions!
Type
Marking Ordering Code
Pin Configuration
Package
BAS 125-04W
14s
Q62702-
1 = A1
2 = C2
3=C1/A2 SOT-323
BAS 125-05W
15s
Q62702-
1 = A1
2 = A2
3=C1/C2 SOT-323
BAS 125-06W
16s
Q62702-
1 = C1
2 = C2
3=A1/A2 SOT-323
BAS 125W
13s
Q62702-
1 = A
3 = C
SOT-323
Maximum Ratings
Parameter
Symbol
Values
Unit
Diode reverse voltage
VR
25
V
Forward current
IF
100
mA
Surge forward current (
t
≤ 10ms)
IFSM
500
Total Power dissipation
TS ≤ 25 °C
Ptot
250
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
- 55 ... + 150
Thermal Resistance
Junction ambient, BAS125W
1)
RthJA
≤ 310
K/W
Junction ambient, BAS 125-04W...06W
1)
RthJA
≤ 425
Junction - soldering point, BAS125W
RthJS
≤ 230
Junction - soldering point, BAS125-04W...06W
RthJS
≤ 265
1) Package mounted on alumina 15mm x 16.7mmm x 0.7mm


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