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TIP162 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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TIP162 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors TIP160/161/162 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT TIP160 320 TIP161 350 V(BR)CEO Collector-emitter breakdown voltage TIP162 IC=10mA, IB=0 380 V VCEsat-1 Collector-emitter saturation voltage IC=6.5A ,IB=0.1A 2.8 V VCEsat-2 Collector-emitter saturation voltage IC=10A ,IB=1A 2.9 V VBEsat Base-emitter saturation voltage IC=6.5A ,IB=0.1A 2.2 V VF Diode forward voltage IF=10A 3.5 V TIP160 VCE=320V, IB=0 TIP161 VCE=350V, IB=0 ICEO Collector cut-off current TIP162 VCE=380V, IB=0 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 100 mA hFE DC current gain IC=4A ; VCE=2.2V 200 Switching times td Delay time 0.3 μs tr Rise time 1.5 μs ts Storage time 2.3 μs tf Fall time VCC =33 V, IC = 6.5 A, IB1 =-IB2 =100 mA tp=20μs ;Duty Cycle≤2.0% 2.8 μs |
Podobny numer części - TIP162 |
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Podobny opis - TIP162 |
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