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SI1424EDH Arkusz danych(PDF) 2 Page - Vishay Siliconix |
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SI1424EDH Arkusz danych(HTML) 2 Page - Vishay Siliconix |
2 / 12 page www.vishay.com 2 Document Number: 67198 S11-0654-Rev. B, 11-Apr-11 Vishay Siliconix Si1424EDH New Product This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 20 V VDS Temperature Coefficient VDS/TJ ID = 250 µA 18 mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ - 2.5 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.4 1.0 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 4.5 V ± 1.5 µA VDS = 0 V, VGS = ± 8 V ± 25 Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS 5 V, VGS = 4.5 V 15 A Drain-Source On-State Resistancea RDS(on) VGS = 4.5 V, ID = 5 A 0.027 0.033 VGS = 2.5 V, ID = 1 A 0.031 0.038 VGS = 1.8 V, ID = 1 A 0.035 0.045 VGS = 1.5 V, ID = 0.5 A 0.040 0.070 Forward Transconductancea gfs VDS = 10 V, ID = 3 A 25 S Dynamicb Total Gate Charge Qg VDS = 10 V, VGS = 8 V, ID = 7.1 A 11.5 18 nC VDS = 10 V, VGS = 4.5 V, ID = 7.1 A 69 Gate-Source Charge Qgs 0.8 Gate-Drain Charge Qgd 1.6 Gate Resistance Rg f = 1 MHz 0.46 2.3 4.6 k Turn-On Delay Time td(on) VDD = 10 V, RL = 1.8 ID 5.7 A, VGEN = 4.5 V, Rg = 1 0.3 0.45 µs Rise Time tr 0.6 0.9 Turn-Off DelayTime td(off) 3.8 6 Fall Time tf 1.7 2.6 Turn-On Delay Time td(on) VDD = 10 V, RL = 1.8 ID 5.7 A, VGEN = 10 V, Rg = 1 0.15 0.25 Rise Time tr 0.3 0.45 Turn-Off DelayTime td(off) 5.6 9 Fall Time tf 1.6 2.5 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 2.3 A Pulse Diode Forward Current ISM 16 Body Diode Voltage VSD IS = 5.7 A, VGS = 0 V 0.85 1.2 V Body Diode Reverse Recovery Time trr IF = 5.7 A, dI/dt = 100 A/µs, TJ = 25 °C 15 30 ns Body Diode Reverse Recovery Charge Qrr 7.5 15 nC Reverse Recovery Fall Time ta 8 ns Reverse Recovery Rise Time tb 15 |
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