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SI1424EDH Arkusz danych(PDF) 2 Page - Vishay Siliconix

Numer części SI1424EDH
Szczegółowy opis  N-Channel 20 V (D-S) MOSFET
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Producent  VISHAY [Vishay Siliconix]
Strona internetowa  http://www.vishay.com
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Document Number: 67198
S11-0654-Rev. B, 11-Apr-11
Vishay Siliconix
Si1424EDH
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Pulse test; pulse width
 300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
20
V
VDS Temperature Coefficient
VDS/TJ
ID = 250 µA
18
mV/°C
VGS(th) Temperature Coefficient
VGS(th)/TJ
- 2.5
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
0.4
1.0
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 4.5 V
± 1.5
µA
VDS = 0 V, VGS = ± 8 V
± 25
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V
1
VDS = 20 V, VGS = 0 V, TJ = 55 °C
10
On-State Drain Currenta
ID(on)
VDS  5 V, VGS = 4.5 V
15
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 4.5 V, ID = 5 A
0.027
0.033
VGS = 2.5 V, ID = 1 A
0.031
0.038
VGS = 1.8 V, ID = 1 A
0.035
0.045
VGS = 1.5 V, ID = 0.5 A
0.040
0.070
Forward Transconductancea
gfs
VDS = 10 V, ID = 3 A
25
S
Dynamicb
Total Gate Charge
Qg
VDS = 10 V, VGS = 8 V, ID = 7.1 A
11.5
18
nC
VDS = 10 V, VGS = 4.5 V, ID = 7.1 A
69
Gate-Source Charge
Qgs
0.8
Gate-Drain Charge
Qgd
1.6
Gate Resistance
Rg
f = 1 MHz
0.46
2.3
4.6
k
Turn-On Delay Time
td(on)
VDD = 10 V, RL = 1.8 
ID  5.7 A, VGEN = 4.5 V, Rg = 1 
0.3
0.45
µs
Rise Time
tr
0.6
0.9
Turn-Off DelayTime
td(off)
3.8
6
Fall Time
tf
1.7
2.6
Turn-On Delay Time
td(on)
VDD = 10 V, RL = 1.8 
ID  5.7 A, VGEN = 10 V, Rg = 1 
0.15
0.25
Rise Time
tr
0.3
0.45
Turn-Off DelayTime
td(off)
5.6
9
Fall Time
tf
1.6
2.5
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
2.3
A
Pulse Diode Forward Current
ISM
16
Body Diode Voltage
VSD
IS = 5.7 A, VGS = 0 V
0.85
1.2
V
Body Diode Reverse Recovery Time
trr
IF = 5.7 A, dI/dt = 100 A/µs, TJ = 25 °C
15
30
ns
Body Diode Reverse Recovery Charge
Qrr
7.5
15
nC
Reverse Recovery Fall Time
ta
8
ns
Reverse Recovery Rise Time
tb
15


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