SI1441EDH datasheet(1/12 Pages) VISHAY

Numer części	SI1441EDH

Szczegółowy opis	P-Channel 20 V (D-S) MOSFET

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Producent	VISHAY [Vishay Siliconix]

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Vishay Siliconix

Si1441EDH

New Product

Document Number: 66823

S10-1827-Rev. A, 09-Aug-10

www.vishay.com

1

P-Channel 20 V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFET

•

Typical ESD Performance 1500 V

•

100 % Rg Tested

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Load Switch for Portable Devices

- Cellular Phone

- DSC

- Portable Game Console

- MP3

- GPS

PRODUCT SUMMARY

VDS (V)

RDS(on) ()ID (A)

a

Qg (Typ.)

- 20

0.041 at VGS = - 4.5 V

- 4

12.5 nC

0.054 at VGS = - 2.5 V

- 4

0.100 at VGS = - 1.8 V

- 4

Ordering Information: Si1441EDH-T1-GE3 (Lead (Pb)-free and Halogen-free)

SOT-363

SC-70 (6-LEADS)

6

4

1

2

3

5

Top View

D

G

D

S

P-Channel MOSFET

S

D

R

G

Marking Code

X X X

B Q X

Lot Traceability

and Date code

Part # code

Notes:

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under steady state conditions is 125 °C/W.

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

- 20

V

Gate-Source Voltage

VGS

± 10

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

- 4a

A

TC = 70 °C

- 4

TA = 25 °C

- 4a, b, c

TA = 70 °C

- 4a, b, c

Pulsed Drain Current (t = 300 µs)

IDM

- 25

Continuous Source-Drain Diode Current

TC = 25 °C

IS

- 2.3

TA = 25 °C

- 1.3b, c

Maximum Power Dissipation

TC = 25 °C

PD

2.8

W

TC = 70 °C

1.8

TA = 25 °C

1.6b, c

TA = 70 °C

1.0b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, d

t

 5 s

RthJA

60

80

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

34

45

Podobny numer części - SI1441EDH

Producent	Numer części	Arkusz danych	Szczegółowy opis
Vishay Siliconix	SI1441EDH	271Kb / 12P	P-Channel 20 V (D-S) MOSFET 01-Jan-2022
VBsemi Electronics Co.,...	SI1441EDH-T1-GE3	1Mb / 9P	P-Channel 20 V (D-S) MOSFET
Vishay Siliconix	SI1441EDH-T1-GE3	271Kb / 12P	P-Channel 20 V (D-S) MOSFET 01-Jan-2022
Vishay Siliconix	SI1441EDH	271Kb / 12P	P-Channel 20 V (D-S) MOSFET 01-Jan-2022

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