Zakładka z wyszukiwarką danych komponentów |
|
SI2367DS Arkusz danych(PDF) 3 Page - Vishay Siliconix |
|
SI2367DS Arkusz danych(HTML) 3 Page - Vishay Siliconix |
3 / 4 page Document Number: 65140 www.vishay.com S09-1760-Rev. A, 14-Sep-09 3 SPICE Device Model Si2367DS Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA TJ = 25 °C, unless otherwise noted Note Dots and squares represent measured data. VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) VSD - Source-to-Drain Voltage (V) 0 3 6 9 12 15 0.0 0.6 1.2 1.8 2.4 3.0 VGS = 5 V, 3.5 V, 3 V, 2.5 V VGS = 2 V VGS = 1.5 V 0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.4 0.8 1.2 1.6 2.0 TJ = 125 °C TJ = - 55 °C TJ = 25 °C 0.00 0.04 0.08 0.12 0.16 0.20 0.0 1.6 3.2 4.8 6.4 8.0 VGS = 2.5 V VGS = 4.5 V 0 240 480 720 960 1200 04 8 12 16 20 Ciss Coss Crss 0.0 1.6 3.2 4.8 6.4 8.0 0.0 3.4 6.8 10.2 13.6 17.0 VDS = 10 V VDS = 15 V ID = 2.5 A 0.001 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 11.2 TJ = 150 °C TJ = 25 °C |
Podobny numer części - SI2367DS |
|
Podobny opis - SI2367DS |
|
|
Link URL |
Polityka prywatności |
ALLDATASHEET.PL |
Czy Alldatasheet okazała się pomocna? [ DONATE ] |
O Alldatasheet | Reklama | Kontakt | Polityka prywatności | Linki | Lista producentów All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |